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TLP595G датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP595G
подробное описание детали  The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP595G датащи(HTML) 2 Page - Toshiba Semiconductor

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TOSHIBA CORPORATION
TLP595G
Note 1:
Application type name for certification test, please use standard product type name, i.e., TLP595G (IFT2): TLP595G
Maximum Ratings (Ta = 25
°C)
Note 1:Device considered a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 8 shorted together.
CLASSIFICATION (Note 1)
TRIGGER LED CURRENT (mA)
MARKING OF
CLASSIFICATION
@ION = 150mA
MIN.
MAX.
(IFT2)
2
T2
Standard
5
T2, Blank
CHARACTERISTIC
SYMBOL
RATING
UNIT
LED
Forward Current
IF
30
mA
Forward Current Derating (Ta
≥ 25°C)
∆I
F/°C
-0.3
mA/
°C
Peak Forward Current (100
µs pulse, 100pps)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
DETECTOR
Off-State Output Terminal Voltage
VOFF
400
V
On-State RMS Current
A Connection
ION
150
mA
B Connection
200
C Connection
300
On-State Current Derating (Ta
≥ 25°C)
A Connection
∆I
ON/°C
-1.5
mA/
°C
B Connection
-2.0
C Connection
-3.0
Junction Temperature
tj
125
°C
Storage Temperature Range
Tstg
-55~100
°C
Operating Temperature Range
Topr
-20~85
°C
Lead Soldering Temperature (10s)
Tsol
260
°C
Isolation Voltage (AC, 1 min., R.H.
≤ 60%)
(Note 2)
BVS
2500
Vrms


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