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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NTD4906NT4G датащит (PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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NTD4906NT4G Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server •DC/DC Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a, e Qg (Typ) 30 0.00 5 at VGS = 10 V 1 nC 0.0 06at VGS = 4.5 V ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 70 °C 60 TA = 25 °C 25.8b, c TA = 70 °C 2 2b, c Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 3 9 Single Pulse Avalanche Energy EAS 94.8 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 90a, e A TA = 25 °C 3.13b, c Maximum Power Dissipation TC = 25 °C PD 205a W TC = 70 °C 135 TA = 25 °C 3.75b, c TA = 70 °C 2.63b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 sec RthJA 32 40 °C/W Maximum Junction-to-Case Steady State RthJC 0.5 0.6 68 D G S N-Channel MOSFET TO-252 S GD Top View 3 8 0 8 0 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw NTD4906NT4G 1 |
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