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KFG5616Q1A-PEB6 датащи(PDF) 6 Page - Samsung semiconductor

номер детали KFG5616Q1A-PEB6
подробное описание детали  OneNAND Specification FLASH MEMORY
Download  113 Pages
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производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFG5616Q1A-PEB6 датащи(HTML) 6 Page - Samsung semiconductor

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OneNAND256(KFG5616x1A-xxB6)
FLASH MEMORY
6
1.5
Product Features
Device Architecture
• Design Technology:
• Supply Voltage:
• Host Interface:
• 3KB Internal BufferRAM:
• SLC NAND Array:
Device Performance
• Host Interface Type:
- Up to 66MHz clock frequency
- Linear Burst 4-, 8-, 16, 32-words with wrap around
- Continuous 512 word Sequential Burst
• Programmable Burst Read Latency
• Multiple Sector Read:
• Multiple Reset Modes:
• Multi Block Erase
• Low Power Dissipation:
- Standby current :
10
µA @1.8V Device
25
µA @2.65V/3.3V Device
- Synchronous Burst Read current(66MHz) : 15mA@1.8V Device
20mA@2.65V/3.3v Device
- Load current :
30mA@1.8v Device,
30mA@2.65V/3.3V Device
- Program current :
25mA@1.8V Device,
28mA@2.65V/3.3V Device
- Erase current :
20mA@1.8V Device,
23mA@2.65V/3.3V Device
- Multi Block Erase current :
20mA@1.8V Device,
23mA@2.65V/3.3V Device
System Hardware
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection Modes
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature
• Detailed chip information
Packaging
• 256Mb products
90nm
1.8V (1.7V ~ 1.95V), 2.65V (2.4 ~ 2.9V), 3.3V (2.7 ~3.6V)
16 bit
1KB BootRAM, 2KB DataRAM
(1K+32)B Page Size, (64K+2K)B Block Size
Synchronous Burst Read
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3(up to 40MHz), 4, 5, 6, and 7
Up to 2 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Resets
up to 64 Blocks
Typical Power,
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
67ball, 7mm x 9mm x max 1.0mmt , 0.8mm ball pitch FBGA
48 TSOP 1, 12mm x 20mm, 0.5mm pitch


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