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RSU002N06T106 датащит (PDF) 2 Page - VBsemi Electronics Co.,Ltd

№ деталь RSU002N06T106
подробность  N-Channel 60-V (D-S) MOSFET
скачать  8 Pages
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RSU002N06T106 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  RSU002N06T106 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd  
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Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.a
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 µA
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
12.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 10
µA
VDS = 0 V, VGS = ± 15 V
1
VDS = 0 V, VGS = ± 10 V
± 150
nA
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 1000
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
800
mA
VGS = 4.5 V, VDS = 10 V
500
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 500 mA
2
Ω
VGS = 4.5 V, ID = 200 mA
4
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
100
mS
Diode Forward Voltage
VSD
IS = 200 mA, VGS = 0 V
1.3
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID ≅ 250 mA
0.4
0.6
nC
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V
f = 1 MHz
30
pF
Output Capacitance
Coss
6
Reverse Transfer Capacitance
Crss
2.5
Switchinga, b, c
Turn-On Time
td(on)
VDD = 30 V, RL = 150 Ω
ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω
25
ns
Turn-Off Time
td(off)
35
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RSU002N06T106
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