поискавой системы для электроныых деталей |
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2SC2497 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC2497 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Power Transistors 188 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage V CEO • TO-126B package which requires no insulation plate for installa- tion to the heat sink I Absolute Maximum Ratings T C = 25°C 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package Unit: mm I Electrical Characteristics T C = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to 2SC2497 VCEO 50 V emitter voltage 2SC2497A 60 Emitter to base voltage VEBO 5V Peak collector current ICP 3A Collector current IC 1.5 A Collector power dissipation PC 1.2 * 1 W 5 * 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 20 V, IE = 0 1 µA ICEO VCE = 10 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 10 µA Collector to base voltage VCBO IC = 1 mA, IE = 0 70 V Collector to emitter 2SC2497 VCEO IC = 2 mA, IB = 0 50 V voltage 2SC2497A 60 Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A 80 220 Collector to emitter saturation voltage VCE(sat) IC = 1.5 A, IB = 0.15 A 1 V Base to emitter saturation voltage VBE(sat) IC = 1.5 A, IB = 0.15 A 1.5 V Transition frequency fT VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz 35 pF Rank R S hFE 80 to 160 120 to 220 8.0 +0.5 –0.1 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Note) *: Rank classification |
Аналогичный номер детали - 2SC2497 |
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Аналогичное описание - 2SC2497 |
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