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NVHL040N65S3 датащи(PDF) 3 Page - ON Semiconductor |
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NVHL040N65S3 датащи(HTML) 3 Page - ON Semiconductor |
3 / 10 page NVHL040N65S3 www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) Symbol Unit Max Typ Min Test Conditions Parameter DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz − 4740 − pF Coss Output Capacitance − 120 − pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V − 1154 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V − 171 − pF Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 32.5 A, VGS =10V (Note 4) − 136 − nC Qgs Gate to Source Gate Charge − 33 − nC Qgd Gate to Drain “Miller” Charge − 59 − nC ESR Equivalent Series Resistance f = 1 MHz − 0.7 − W SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time VDD = 400 V, ID = 32.5 A, VGS =10V, Rg = 3.3 W (Note 4) − 35 − ns tr Turn-On Rise Time − 51 − ns td(off) Turn-Off Delay Time − 95 − ns tf Turn-Off Fall Time − 30 − ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Drain to Source Diode Forward Current − − 65 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 162.5 A VSD Drain to Source Diode Forward Voltage VGS =0V, ISD = 32.5 A − − 1.2 V trr Reverse Recovery Time VGS =0V, ISD = 32.5 A, dIF/dt = 100 A/ms − 534 − ns Qrr Reverse Recovery Charge − 13.6 − mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. |
Аналогичный номер детали - NVHL040N65S3 |
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