поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

NVHL040N65S3 датащи(PDF) 3 Page - ON Semiconductor

номер детали NVHL040N65S3
подробное описание детали  MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-Drive
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVHL040N65S3 датащи(HTML) 3 Page - ON Semiconductor

  NVHL040N65S3 Datasheet HTML 1Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 2Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 3Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 4Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 5Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 6Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 7Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 8Page - ON Semiconductor NVHL040N65S3 Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
NVHL040N65S3
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
Symbol
Unit
Max
Typ
Min
Test Conditions
Parameter
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
4740
pF
Coss
Output Capacitance
120
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS =0V
1154
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS =0V
171
pF
Qg(tot)
Total Gate Charge at 10 V
VDS = 400 V, ID = 32.5 A, VGS =10V
(Note 4)
136
nC
Qgs
Gate to Source Gate Charge
33
nC
Qgd
Gate to Drain “Miller” Charge
59
nC
ESR
Equivalent Series Resistance
f = 1 MHz
0.7
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
VDD = 400 V, ID = 32.5 A,
VGS =10V, Rg = 3.3 W
(Note 4)
35
ns
tr
Turn-On Rise Time
51
ns
td(off)
Turn-Off Delay Time
95
ns
tf
Turn-Off Fall Time
30
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Drain to Source Diode Forward Current
65
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
162.5
A
VSD
Drain to Source Diode Forward Voltage VGS =0V, ISD = 32.5 A
1.2
V
trr
Reverse Recovery Time
VGS =0V, ISD = 32.5 A,
dIF/dt = 100 A/ms
534
ns
Qrr
Reverse Recovery Charge
13.6
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.


Аналогичный номер детали - NVHL040N65S3

производительномер деталидатащиподробное описание детали
logo
ON Semiconductor
NVHL040N65S3F ONSEMI-NVHL040N65S3F Datasheet
378Kb / 11P
   MOSFET ??Power, N-Channel, SUPERFET III, FRFET650 V, 65 A, 40 m
July, 2019 ??Rev. 1
NVHL040N65S3HF ONSEMI-NVHL040N65S3HF Datasheet
330Kb / 11P
   MOSFET - Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m
January, 2021-Rev. P1
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com