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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BD9P1X5EFV-C датащи(PDF) 20 Page - Rohm |
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BD9P1X5EFV-C датащи(HTML) 20 Page - Rohm |
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20 / 60 page  20/57 TSZ02201-0J1J0AL01480-1-2 © 2019 ROHM Co., Ltd. All rights reserved. 08.Apr.2020 Rev.002 www.rohm.com TSZ22111 • 15 • 001 BD9P1x5EFV-C Series Function Explanation - continued 3. Enable Control The device shutdown can be controlled by the EN pin. When VEN reaches VENH (2.0 V) or higher, the internal circuit is activated. When the VOUT_DIS pin is connected to output voltage and the EN pin is low, the VOUT_DIS pin is pulled down by the resistance of RDIS (75 Ω, Typ) and discharges the output voltage. This discharge function is deactivated when VOUT_DIS voltage falls below VDISL (200 mV, Typ) at once or 30 ms (Typ) pass after the EN pin becomes high. After being deactivated, the VOUT starts up with soft start operation. The delay time tDLY (400 µs, Typ) is implemented from the EN pin becoming high to VOUT starting up regardless of VOUT_DIS voltage. The soft start time (VOUT x 0.1 to VOUT x 0.9) is set to tSS (3.0 ms, Typ). When an EN voltage becomes VENL (0.8 V) or less, the device is shut down. When discharge function is not required, connect the VOUT_DIS pin to GND. Figure 33. Enable ON/OFF Timing Chart 4. Reset Function For BD9P105EFV-C, the reset function monitors the FB pin voltage. When the output voltage reaches VRTH (95.3 %, Typ) or more of the normal regulation voltage, the open drain MOSFET on the RESET pin is turned off in tRSTNACT (3.6 ms, Typ) and the output of the RESET pin becomes high by its pull-up resistor. In addition, when the FB voltage reaches VRTL (92.8 %, Typ) or less, the open drain MOSFET on the RESET pin is turned on and the RESET pin is pulled down with an impedance of RRST (190 Ω, Typ). To reject noise, the filtering time tRSTNFILT (5 µs, Typ) is implemented after FB voltage decreases below its threshold voltage (VRTL). The reset function also works when output over voltage is detected. When the output voltage reaches VOVPH (107.3 %, Typ) or more, the open drain MOSFET on the RESET pin is turned on. Then, when the FB voltage goes below VOVPL (104.7 %, Typ) or less, the open drain MOSFET on the RESET pin is turned off. The reset active time and filtering time are activated when over voltage conditions are detected. For BD9P135EFV-C and BD9P155EFV-C, this function monitors the VOUT_SNS pin voltage. The RESET output voltage low level (VRESET_LOW(Max)) when the open drain MOSFET is turned on is calculated by the following equation. It is recommended to use resistance of 5 kΩ to 100 kΩ and pull it up to the VREG pin or the power supply in the absolute maximum voltage ratings of the RESET pin. During shutdown condition, the RESET pin is pulled down regardless the output voltage as far as VIN is 2 V or higher. Figure 34. Reset Timing Chart (BD9P105EFV-C) ������������������������_������������(������������) = ��������������������−�������� × ����������������(������������) ����������������(������������)+��������������������−�������� [V] Where: ������������������������_������������(������������) is the RESET Low voltage level (Max) [V] ��������������������−�������� is the Voltage of pull-up power source [V] ����������������(������������) is the RESET ON Resistance (Max) [Ω] ��������������������−�������� is the value of pull-up resistor to VPULL_UP [Ω] VEN VOUT tSS x 1.25 VENH VENL tSS 10 % 90 % VDISL tDLY Discharge ON OFF 30 ms 2.0 V 0.8 V tDLY 3.0 ms 400 µs (Typ) (Typ) 200 mV (Typ) 400 µs (Typ) VDISL 200 mV (Typ) (Typ) VOUT VRESET VOVPH = VFB1 × 107.3 % (Typ) VOVPL = VFB1 × 104.7 % (Typ) VRTH = VFB1 × 95.3 % (Typ) VRTL = VFB1 × 92.8 % (Typ) VFB1 tRSTNACT 3.6 ms (Typ) Under 5 µs (Typ) 5 µs (Typ) 3.6 ms (Typ) Under 5 µs (Typ) 5 µs (Typ) 3.6 ms (Typ) Under tRSTNFILT tRSTNFILT tRSTNACT Under tRSTNFILT tRSTNFILT tRSTNACT |
Аналогичный номер детали - BD9P1X5EFV-C |
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Аналогичное описание - BD9P1X5EFV-C |
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