поискавой системы для электроныых деталей |
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2SD1268 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SD1268 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Complementary to 2SB943 s Features q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 130 80 7 6 3 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 * VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 0.5A, IB1 = 50mA, IB2 = –50mA, VCC = 50V min 80 45 60 typ 30 0.5 2.5 0.15 max 10 50 260 0.5 1.5 Unit µA µA V V V MHz µs µs µs *h FE2 Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 TC=25°C Ta=25 °C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification. |
Аналогичный номер детали - 2SD1268 |
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Аналогичное описание - 2SD1268 |
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