1

Power Transistors

2SD1535

Silicon NPN triple diffusion planar type Darlington

For high power amplification

q

Extremely satisfactory linearity of the forward current transfer

q

q

Wide area of safe operation (ASO)

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

500

400

12

14

7

0.5

50

2

150

–55 to +150

Unit

V

V

V

A

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

400

500

200

typ

20

1.5

5.0

6.5

max

0.1

0.1

100

2.0

2.5

Unit

mA

mA

mA

mA

V

V

MHz

µs

µs

µs

Ta=25

°C

X

L 25mH

15V

1

Ω

Y

G

6V

120

Ω

60Hz

I

0.2

0.1

80

V

Unit: mm

Internal Connection

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

B

C

E