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2SD1535 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SD1535 датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg Ratings 500 400 12 14 7 0.5 50 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO ICEO IEBO VCEO(sus) * hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 IC = 100mA, RBZ = ∞, L = 25mH VCE = 2V, IC = 2A VCE = 2V, IC = 6A IC = 7A, IB = 70mA IC = 7A, IB = 70mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 70mA, IB2 = –70mA, VCC = 300V min 400 500 200 typ 20 1.5 5.0 6.5 max 0.1 0.1 100 2.0 2.5 Unit mA mA mA mA V V MHz µs µs µs *V CEO(sus) Test circuit TC=25°C Ta=25 °C X L 25mH 15V 1 Ω Y G 6V 120 Ω 60Hz I C(A) 0.2 0.1 80 V CE(V) Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 B C E |
Аналогичный номер детали - 2SD1535 |
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Аналогичное описание - 2SD1535 |
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