RFM03U3P datasheet(2/6 Pages) TOSHIBA

номер детали	RFM03U3P

подробное описание детали	Field Effect Transistors Silicon N-Channel MOS

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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RFM03U3P

2

5.

5. Electrical Characteristics (Note) (Unless otherwise specified, T

Electrical Characteristics (Note) (Unless otherwise specified, T

Electrical Characteristics (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Drain-source leakage current

Gate-source leakage current

Gate threshold voltage

Output power

Drain efficiency

Power gain

Maximum load mismatch without

damage

Symbol

IDSS

IGSS

Vth

PO

ηD

GPS



Note

(Note 1)

Test Condition

VDS = 10 V, VGS = 0 V

VGS = 3 V

VDS = 3.6 V, ID = 0.1 mA

VDS = 3.6 V, Iidle = 500 mA (VGS =

adjust),

f = 470 MHz, PI = 0.1 W, ZG = ZL = 50

Ω

VDS = 3.6 V, PO = 3 W (PI = adjust),

Iidle = 500 mA (VGS = adjust), f = 470

MHz,

VSWR LOAD 20:1 all phase

Min



0.1

2.3

50

13.6



Typ.



0.6

3.0

60

14.8



Max

10

5

1.1



Unit

µA

V

W

%

dB



Note:

These performance characteristics were measured using Toshiba-specified tools.

Note 1: Not damaged

6.

6. Output Power Test Fixture

Output Power Test Fixture

(Test condition: f = 470 MHz, V

(Test condition: f = 470 MHz, VDS

DS

= 3.6 V, I

= 3.6 V, Iidle

idle

= 500 mA, P

= 500 mA, PIIII = 0.1 W)

= 0.1 W)

7.

7. Marking

Marking

2015-09-11

Rev.1.0

Аналогичный номер детали - RFM03U3P

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	RFM03U3CT	175Kb / 4P	Field Effect Transistor Silicon N Channel MOS Type
Toshiba Semiconductor	RFM03U3CT	1Mb / 73P	Bipolar Small-Signal Transistors

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Аналогичное описание - RFM03U3P

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	RFM06U3X	297Kb / 6P	Field Effect Transistors Silicon N-Channel MOS
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Renesas Technology Corp	2SK1495	592Kb / 11P	N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 1993
NXP Semiconductors	BC264A	294Kb / 6P	N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS December 1990
NXP Semiconductors	BF510	37Kb / 7P	N-channel silicon field-effect transistors December 1997
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NXP Semiconductors	BF245A	307Kb / 13P	N-channel silicon field-effect transistors 1996 Jul 30
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Аналогичный номер детали - RFM03U3P

Аналогичное описание - RFM03U3P

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