1

Power Transistors

2SD1611

Silicon NPN triple diffusion planar type Darlington

For power amplification

q

q

q

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

500

400

5

10

6

40

1.3

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Symbol

Conditions

min

400

5

500

typ

15

max

100

1.5

2.5

Unit

µA

V

V

V

V

MHz

Ta=25

°C

Internal Connection

B

C

E

Unit: mm

1:Base

2:Collector

3:Emitter

N Type Package

8.5

±0.2

6.0

±0.5

1.5max.

0.8

±0.1

5.08

±0.5

2.54

±0.3

1.1max.

0.5max.

1.0

±0.1

3.4

±0.3

2

13

Unit: mm

8.5

±0.2

6.0

±0.3

3.4

±0.3

2.54

±0.3

5.08

±0.5

1.0

±0.1

0.8

±0.1

0 to 0.4

1.1 max.

R0.5

R0.5

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)