STM9435A datasheet(4/8 Pages) VBSEMI

номер детали	STM9435A

подробное описание детали	P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

50

1

VSD - Source-to-Drain Voltage (V)

10

TJ = 25 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.04

0.08

0.12

0.16

0.20

0

2468

10

ID = 5.8 A

VGS - Gate-to-Source Voltage (V)

0

90

150

30

60

Time (s)

120

110

10-1

10- 2

10- 3

Safe Operating Area, Junction-to-Foot

100

1

0.1

1

10

100

0.01

10

100 ms

0.1

TC = 25 °C

Single Pulse

1 s

10 s

DC

10 ms

1 ms

Limited by RDS(on)*

V

DS - Drain-to-Source Voltage (V)

* V

DS > minimum VGS at which RDS(on) is specified

STM9435A

4

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Аналогичный номер детали - STM9435A

производитель	номер детали	датащи	подробное описание детали
SamHop Microelectronics...	STM9435	655Kb / 7P	P -Channel E nhancement Mode F ield E ffect Transistor
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Аналогичное описание - STM9435A

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
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Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
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	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
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