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STN2342S-TRG датащи(PDF) 1 Page - VBsemi Electronics Co.,Ltd

номер детали STN2342S-TRG
подробное описание детали  N-Channel 20 V (D-S) MOSFET
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STN2342S-TRG датащи(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 20 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
DC/DC Converters
Load Switch for Portable Applications
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
e
Qg (Typ.)
20
0.028 at VGS = 4.5 V
6a
8.8 nC
0.042 at VGS = 2.5 V
6a
0.050 at VGS = 1.8 V
5.6
G
S
D
Top View
2
3
SOT-23
1
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on TC = 25 °C.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
6a
A
TC = 70 °C
5.1
TA = 25 °C
5b, c
TA = 70 °C
4b, c
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
1.75
TA = 25 °C
1.04b, c
Maximum Power Dissipation
TC = 25 °C
PD
2.1
W
TC = 70 °C
1.3
TA = 25 °C
1.25b, c
TA = 70 °C
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 5 s
RthJA
80
100
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
60
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STN2342S-TRG
1


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