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STN2342S-TRG датащи(PDF) 2 Page - VBsemi Electronics Co.,Ltd

номер детали STN2342S-TRG
подробное описание детали  N-Channel 20 V (D-S) MOSFET
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STN2342S-TRG датащи(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
25
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.45
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 70 °C
10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 5.0 A
0.028
Ω
VGS = 2.5 V, ID = 4.7 A
0.042
VGS = 1.8 V, ID = 4.3 A
0.050
Forward Transconductancea
gfs
VDS = 10 V, ID = 5.0 A
24
S
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
865
pF
Output Capacitance
Coss
105
Reverse Transfer Capacitance
Crss
55
Total Gate Charge
Qg
VDS = 10 V, VGS = 5 V, ID = 5.0 A
12
18
nC
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
8.8
14
Gate-Source Charge
Qgs
1.1
Gate-Drain Charge
Qgd
0.7
Gate Resistance
Rg
f = 1 MHz
0.5
2.4
4.8
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
816
ns
Rise Time
tr
17
26
Turn-Off Delay Time
td(off)
31
47
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.2 Ω
ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω
510
Rise Time
tr
13
20
Turn-Off Delay Time
td(off)
21
32
Fall Time
tf
612
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.75
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 4 A, VGS = 0 V
0.75
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
12
20
ns
Body Diode Reverse Recovery Charge
Qrr
510
nC
Reverse Recovery Fall Time
ta
7
ns
Reverse Recovery Rise Time
tb
5
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STN2342S-TRG
2


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