поискавой системы для электроныых деталей |
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2SD1772A датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SD1772A датащи(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A s Features q Large collector power dissipation PC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 200 200 150 180 6 2 1 25 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1772 2SD1772A 2SD1772 2SD1772A TC=25°C Ta=25 °C *h FE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO VEBO hFE1 * hFE2 VBE VCE(sat) fT Cob Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V, IC = 100mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz min 150 180 6 60 50 typ 20 27 max 50 50 240 1 1 Unit µA µA V V V V MHz pF 2SD1772 2SD1772A Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
Аналогичный номер детали - 2SD1772A |
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Аналогичное описание - 2SD1772A |
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