2SD1821 datasheet(1/2 Pages) PANASONIC

номер детали	2SD1821

подробное описание детали	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Transistor

Rank

R

S

hFE

130 ~ 220

185 ~ 330

2SD1821

PR

PS

2SD1821A

LR

LS

2SD1821, 2SD1821A

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise

amplification

s Features

q

High collector to emitter voltage VCEO.

q

Low noise voltage NV.

q

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Emitter

EIAJ:SC–70

3:Collector

S–Mini Type Package

2.1

±0.1

1.25

±0.1

0.425

1

3

2

0.2

±0.1

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

150

185

150

185

5

100

50

150

–55 ~ +150

Unit

V

mA

mW

˚C

2SD1821

2SD1821A

2SD1821

2SD1821A

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Noise voltage

Symbol

ICBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

Cob

NV

Conditions

VCB = 100V, IE = 0

IC = 100µA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 10mA

IC = 30mA, IB = 3mA

VCB = 10V, IE = –10mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

150

185

5

130

typ

150

2.3

150

max

1

330

1

Unit

µA

V

MHz

pF

mV

2SD1821

2SD1821A

*h

FE Rank classification

Marking symbol :

P(2SD1821)

L(2SD1821A)

Marking

Symbol

Аналогичный номер детали - 2SD1821

производитель	номер детали	датащи	подробное описание детали
Guangdong Kexin Industr...	2SD1821	45Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SD1821-R	925Kb / 2P	NPN Transistors
	2SD1821-S	925Kb / 2P	NPN Transistors
	2SD1821A	45Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SD1821	925Kb / 2P	NPN Transistors

More results

Аналогичное описание - 2SD1821

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD814	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD958	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
	2SC2632	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC2631	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC4715	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC5346	36Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC2634	38Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
	2SC3312	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
	2SD1993	40Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
	2SB1463	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

More results

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Аналогичный номер детали - 2SD1821

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