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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7342D2PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7342D2PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF7342D2PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– -2.0 ISM Pulsed Source Current (Body Diode) ––– ––– -27 VSD Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 54 80 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units Conditions If (av) Max.AverageForwardCurrent 3.0 50% Duty Cycle. Rectangular Wave, TA = 57°C See Fig. 21 ISM Max. peak one cycle Non-repetitive 490 5µs sine or 3µs Rect. pulse Following any rated Surge current 70 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied A Schottky Diode Maximum Ratings A Schottky Diode Electrical Specifications Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA ––– 95 105 VGS = -10V, ID = -3.4A ––– 150 170 VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A ––– ––– -2.0 VDS = -44V, VGS = 0V ––– ––– -25 VDS = -44V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 26 38 ID = -3.1A Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 6 & 14 td(on) Turn-On Delay Time ––– 14 22 VDD = -28V tr Rise Time ––– 10 15 ID = -1.0A td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0Ω tf Fall Time ––– 22 32 VGS = -10V, Ciss Input Capacitance ––– 690 ––– VGS = 0V Coss Output Capacitance ––– 210 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Max. Units Conditions Vfm Max. Forward Voltage Drop 0.61 If = 3.0A, Tj = 25°C 0.76 If = 6.0A, Tj = 25°C 0.53 If = 3.0A, Tj = 125°C 0.65 If = 6.0A, Tj = 125°C Vrrm Max. Working Peak Reverse Voltage 60 Irm Max. Reverse Leakage Current 2.0 mA Vr = 60V Tj = 25°C 30 Tj = 125°C V V Ct Max. Junction Capacitance 145 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C |
Аналогичный номер детали - IRF7342D2PBF |
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Аналогичное описание - IRF7342D2PBF |
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