поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

M4Z32-BR00SH датащи(PDF) 7 Page - STMicroelectronics

номер детали M4Z32-BR00SH
подробное описание детали  3V NVRAM Supervisor for Up to 8 LPSRAMs
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M4Z32-BR00SH датащи(HTML) 7 Page - STMicroelectronics

Back Button M4Z32-BR00SH Datasheet HTML 3Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 4Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 5Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 6Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 7Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 8Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 9Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 10Page - STMicroelectronics M4Z32-BR00SH Datasheet HTML 11Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 20 page
background image
7/20
M40Z300AV
Data Retention Lifetime Calculation
Most low power SRAMs on the market today can
be used with the M40Z300AV NVRAM SUPERVI-
SOR. There are, however some criteria which
should be used in making the final choice of which
SRAM to use. The SRAM must be designed in a
way where the chip enable input disables all other
inputs to the SRAM. This allows inputs to the
M40Z300AV and SRAMs to be “Don't care” once
VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0V. The
chip enable access time must be sufficient to meet
the system needs with the chip enable propaga-
tion delays included. If the SRAM includes a sec-
ond chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for
the system, it is important to review the data reten-
tion
current
specifications
for
the
particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0V. Manufacturers gen-
erally specify a typical condition for room temper-
ature along with a worst case condition (generally
at elevated temperatures). The system level re-
quirements will determine the choice of which val-
ue to use.
The data retention current value of the SRAMs can
then be added to the IBAT value of the M40Z300AV
to determine the total current requirements for
data retention. The available battery capacity for
the SNAPHAT® of your choice can then be divided
by this current to determine the amount of data re-
tention available (see Table 13., page 18).
CAUTION: Take care to avoid inadvertent dis-
charge through VOUT and E1CON - E4CON after
battery has been attached.
For a further more detailed review of lifetime calcu-
lations, please see Application Note AN1012.
Power-on Reset Output
All microprocessors have a reset input which forc-
es them to a known state when starting. The
M40Z300AV has a reset output (RST) pin which is
guaranteed to be low within tWPT of VPFD (see Ta-
ble 7., page 13). This signal is an open drain con-
figuration. An appropriate pull-up resistor should
be chosen to control the rise time. This signal will
be valid for all voltage conditions, even when VCC
equals VSS.
Once VCC exceeds the power failure detect volt-
age VPFD, an internal timer keeps RST low for
tREC to allow the power supply to stabilize.
Battery Low Pin
The M40Z300AV automatically performs battery
voltage monitoring upon power-up, and at factory-
programmed time intervals of at least 24 hours.
The Battery Low (BL) pin will be asserted if the
battery voltage is found to be less than approxi-
mately 2.5V. The BL pin will remain asserted until
completion of battery replacement and subse-
quent battery low monitoring tests, either during
the next power-up sequence or the next scheduled
24-hour interval.
If a battery low is generated during a power-up se-
quence, this indicates that the battery is below
2.5V and may not be able to maintain data integrity
in the SRAM. Data should be considered suspect,
and verified as correct. A fresh battery should be
installed.
If a battery low indication is generated during the
24-hour interval check, this indicates that the bat-
tery is near end of life. However, data is not com-
promised due to the fact that a nominal VCC is
supplied. In order to insure data integrity during
subsequent periods of battery back-up mode, the
battery should be replaced. The SNAPHAT® top
should be replaced with valid VCC applied to the
device.
The M40Z300AV only monitors the battery when a
nominal VCC is applied to the device. Thus appli-
cations which require extensive durations in the
battery back-up mode should be powered-up peri-
odically (at least once every few months) in order
for this technique to be beneficial. Additionally, if a
battery low is indicated, data integrity should be
verified upon power-up via a checksum or other
technique. The BL pin is an open drain output and
an appropriate pull-up resistor to VCC should be
chosen to control the rise time.


Аналогичный номер детали - M4Z32-BR00SH

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
M4Z32-BR00SH STMICROELECTRONICS-M4Z32-BR00SH Datasheet
285Kb / 19P
   5V or 3V NVRAM SUPERVISOR FOR LPSRAM
M4Z32-BR00SH STMICROELECTRONICS-M4Z32-BR00SH Datasheet
49Kb / 7P
   ZEROPOWER SNAPHAT Battery
November 1999
M4Z32-BR00SH STMICROELECTRONICS-M4Z32-BR00SH Datasheet
252Kb / 24P
   4 Mbit (512 Kbit x 8) ZEROPOWER SRAM
M4Z32-BR00SH STMICROELECTRONICS-M4Z32-BR00SH Datasheet
230Kb / 25P
   5V or 3V NVRAM supervisor for LPSRAM
M4Z32-BR00SH STMICROELECTRONICS-M4Z32-BR00SH Datasheet
163Kb / 12P
   ZEROPOWER SNAPHAT (BATTERY)
More results

Аналогичное описание - M4Z32-BR00SH

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
M40Z300 STMICROELECTRONICS-M40Z300_05 Datasheet
348Kb / 21P
   5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
M40Z300 STMICROELECTRONICS-M40Z300_07 Datasheet
221Kb / 25P
   5V or 3V NVRAM supervisor for up to 8 LPSRAMs
M40Z111 STMICROELECTRONICS-M40Z111_07 Datasheet
180Kb / 21P
   5V or 3V NVRAM supervisor for up to two LPSRAMs
M40Z111 STMICROELECTRONICS-M40Z111 Datasheet
107Kb / 15P
   5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z300 STMICROELECTRONICS-M40Z300_10 Datasheet
431Kb / 25P
   5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
M40SZ100Y STMICROELECTRONICS-M40SZ100Y Datasheet
285Kb / 19P
   5V or 3V NVRAM SUPERVISOR FOR LPSRAM
M40SZ100Y STMICROELECTRONICS-M40SZ100Y_07 Datasheet
230Kb / 25P
   5V or 3V NVRAM supervisor for LPSRAM
M40Z300 STMICROELECTRONICS-M40Z300 Datasheet
128Kb / 16P
   NVRAM CONTROLLER for up to EIGHT LPSRAM
STM706T STMICROELECTRONICS-STM706T Datasheet
468Kb / 26P
   3V Supervisor
M40SZ100Y STMICROELECTRONICS-M40SZ100Y_10 Datasheet
442Kb / 24P
   5 V or 3 V NVRAM supervisor for LPSRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com