Continental Device India Limited

An ISO/TS 16949 and ISO 9001 Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CN452 / CN453

TO-92

Plastic Package

General Purpose Transistors designed for Small and Medium Signal Amplification

from D.C to Radio Frequencies

Complementary CP552 and CP553

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

CN453

UNITS

Collector Base Voltage

120

V

Collector Emitter Voltage

100

V

Emitter Base Voltage

V

Peak Pulse Current

A

Collector Current Continuous

A

Base Current

mA

W

W

W

Operating and Storage Junction

Temperature Range

ºC

*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min

10mm x 10 mm, copper

DESCRIPTION

SYMBOL

TEST CONDITION

CN453

UNITS

Collector Cut Off Current

nA

<100

nA

Emitter Cut Off Current

<100

nA

Collector Emitter Saturation Voltage

<0.7

V

Base Emitter Saturation Voltage

<1.3

V

Collector Emitter Voltage

>100

V

DC Current Gain

40 - 200

>10

DYNAMIC CHARACTERISTICS

DESCRIPTION

SYMBOL

TEST CONDITION

CN453

UNITS

Transition Frequency

f=100MHz

>100

MHz

Output Capacitance

<15

pF

*Pulse Condition: Pulse Width = 300

µµs, Duty Cycle < 2%.

CN452_453Rev_2 211204E

0.8

2.0

- 65 to +150

<15

>10

CN452

>100

<0.7

<1.3

>80

40 - 150

CN452

<100

<100

SYMBOL

CN452

100

80

1.0

5.0

2.0

1.0

200

E B

C

Continental Device India Limited

Data Sheet

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