SI6874EDQ datasheet(2/5 Pages) VISHAY

номер детали	SI6874EDQ

подробное описание детали	Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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Si6874EDQ

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2

Document Number: 71252

S-01753—Rev. A, 14-Aug-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.40

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"1

mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"10

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

20

mA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

20

A

DiS

OS

R

i

a

VGS = 4.5 V, ID = 6.5 A

0.021

0.026

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 5.8 A

0.025

0.031

W

VGS = 1.8 V, ID = 5.0 A

0.031

0.039

Forward Transconductancea

gfs

VDS = 10 V, ID = 6.5 A

25

S

Diode Forward Voltagea

VSD

IS = 1.5 A, VGS = 0 V

0.65

1.1

V

Dynamicb

Total Gate Charge

Qg

V10 V V

4 5 V I

6 5 A

12.5

18

C

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 6.5 A

2.7

nC

Gate-Drain Charge

Qgd

2.7

Turn-On Delay Time

td(on)

V10 V R

10

W

0.7

1.0

Rise Time

tr

VDD = 10 V, RL = 10 W

I1 A V

4 5 V R

6

W

1.3

2.0

ms

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

5.5

8.0

ms

Fall Time

tf

4.6

7.0

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.01

100

10,000

Gate Current vs. GateSource Voltage

0369

12

15

18

GateCurrent vs. GateSource Voltage

VGS – Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS – Gate-to-Source Voltage (V)

15

0

36

9

12

TJ = 25_C

TJ = 150_C

8

6

4

2

0

Аналогичный номер детали - SI6874EDQ

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Vishay Siliconix	SI6875DQ	57Kb / 4P	Dual P-Channel 20-V (D-S) MOSFET, Common Drain Rev. A, 12-Jun-00
Vishay Siliconix	SI6876EDQ	53Kb / 4P	Bi-Directional N-Channel 30-V (D-S) MOSFET Rev. B, 01-Jul-02

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Аналогичное описание - SI6874EDQ

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