поискавой системы для электроныых деталей
Selected language     Russian  ▼

Delete All
ON OFF
ALLDATASHEETRU.COM

X  

Preview PDF Download HTML

AM29DL164DB120PCF датащит (PDF) 4 Page - Advanced Micro Devices

№ деталь AM29DL164DB120PCF
подробность  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
скачать  57 Pages
Scroll/Zoom Zoom In 100% Zoom Out
производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo 

AM29DL164DB120PCF Datasheet(HTML) 4 Page - Advanced Micro Devices

 
Zoom Inzoom in Zoom Outzoom out
 4 / 57 page
background image
4
Am29DL16xD
May 26, 2004
GENERAL DESCRIPTION
The Am29DL16xD family consists of 16 megabit, 3.0
volt-only flash memory devices, organized as 1,048,576
words of 16 bits each or 2,097,152 bytes of 8 bits each.
Word mode data appears on DQ0–DQ15; byte mode
data appears on DQ0–DQ7. The device is designed to
be programmed in-system with the standard 3.0 volt
V
CC supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 70, 90,
or 120 ns. The devices are offered in 48-pin TSOP,
48-ball Fine-pitch BGA, 48-ball Very Thin Profile
Fine-pitch BGA, and 64-ball Fortified BGA packages.
Standard control pins—chip enable (CE#), write en-
able (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention
issues.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
The Am29DL16xD devices uses multiple bank archi-
tectures to provide flexibility for different applications.
Four devices are available with these bank sizes:
Am29DL16xD Features
The SecSi
™ (Secured Silicon) Sector is an extra sec-
tor capable of being permanently locked by AMD or
customers. The SecSi Sector Indicator Bit (DQ7) is
permanently set to a 1 if the part is factory locked,
and set to a 0 if customer lockable. This way, cus-
tomer lockable parts can never be used to replace a
factory locked part. Current version of device has 64
Kbytes; future versions will have only 256 bytes.
This should be considered during system design.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as bonus space, reading and writing like any
other flash sector, or may permanently lock their own
code there.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is an a d vantage c o mpared to s y s t e m s w here
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device sta-
tus bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
CC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
or y. Thi s c an be ac hie v ed in-s y s t e m or v i a
programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
Th e syste m can also place the device into th e
standby mode. Power consumption is greatly re-
duced in both modes.
Device
Bank 1
Bank 2
DL161
0.5 Mb
15.5 Mb
DL162
2 Mb
14 Mb
DL163
4 Mb
12 Mb
DL164
8 Mb
8 Mb


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53  54  55  56  57 


датащит скачать



номер связанных деталей

номер деталиподробность деталиHtml Viewпроизводитель
A29DL16X16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAMIC Technology
AM29DL322D32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
A29DL32X32 Megabit 4M x 8-Bit/2M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAMIC Technology
AM29DL400B4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL800B8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL32XG32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29DL16XC16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29PDL128G128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only Simultaneous Read/ Write Flash Memory with VersatileIO Control 1 2 3 4 5 MoreSPANSION
AM29PDLI27H128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 1 2 3 4 5 MoreSPANSION
AM29PDL640G64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 1 2 3 4 5 MoreSPANSION

ссылки URL



Privacy Policy
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |  реклама   |   контакт   |   Конфиденциальность    |   закладка   |   обмен ссыками   |   поиск по производителю
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn