поискавой системы для электроныых деталей |
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STN1A60 датащи(PDF) 1 Page - SemiWell Semiconductor |
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STN1A60 датащи(HTML) 1 Page - SemiWell Semiconductor |
1 / 6 page copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Absolute Maximum Ratings ( TJ = 25°C unless otherwise specifed ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage 600 800 V IT(RMS) R.M.S On-State Current TC = 58 °C 1.0 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 9.1/10 A I2t I2t 0.41 A2s PGM Peak Gate Power Dissipation 1.0 W PG(AV) Average Gate Power Dissipation 0.1 W IGM Peak Gate Current 0.5 A VGM Peak Gate Voltage 6.0 V TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C Mass 0.2 g STN1A60/80 Apr, 2003. Rev. 3 Features ◆ Repetitive Peak Off-State Voltage : 600/800V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low power AC switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 3.T2 2.Gate 1.T1 Symbol ○ ○ ○ TO-92 ▼▲ 1 3 2 1/6 SemiWell Semiconductor Bi-Directional Triode Thyristor |
Аналогичный номер детали - STN1A60 |
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Аналогичное описание - STN1A60 |
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