поискавой системы для электроныых деталей |
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STP4A60S датащи(PDF) 1 Page - SemiWell Semiconductor |
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STP4A60S датащи(HTML) 1 Page - SemiWell Semiconductor |
1 / 5 page copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Absolute Maximum Ratings ( T J = 25°C unless otherwise specified ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current TC =107 °C 4.0 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 30/33 A I2t I2t 4.5 A2s PGM Peak Gate Power Dissipation 1.5 W PG(AV) Average Gate Power Dissipation 0.1 W IGM Peak Gate Current 1.0 A VGM Peak Gate Voltage 7.0 V TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C Aug, 2003. Rev. 3 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 2.T2 3.Gate 1.T1 Symbol ○ ○ ○ TO-220 ▼▲ 1/5 Sensitive Gate Triacs STP4A60S SemiWell Semiconductor 1 3 2 |
Аналогичный номер детали - STP4A60S |
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Аналогичное описание - STP4A60S |
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