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SI8252-IM датащи(PDF) 4 Page - Silicon Laboratories |
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SI8252-IM датащи(HTML) 4 Page - Silicon Laboratories |
4 / 30 page Si8250/1/2 4 Preliminary Rev. 0.8 1. Electrical Specifications Table 1. Absolute Maximum Ratings* Parameter Conditions Min. Typ. Max. Units Ambient Temperature under Bias –55 — +135 °C Storage Temperature –65 — +150 °C Voltage on any Port0 Pin with respect to GND –0.3 — 5.5 V Voltage on all other pins with respect to GND –0.3 — 4.0 V Voltage on VDD with respect to GND –0.3 — 4.0 V Maximum total current through VDD or GND — — 400 mA Maximum output current sunk by RST or any Port pin —— 80 mA *Note: Stresses above those listed under "2.1 Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the devices at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 2. DC Electrical Specifications TA = –40 to +125 °C, VDD = 2.5 V, SYSCLK = 25 MHz, PLLCLK = 200 MHz unless otherwise specified. Parameter Conditions Min Typ Max Units Supply Voltage 2.25 — 2.75 V Supply Current, all Peripherals Enabled Analog + digital supply current. — 26 — mA Lockout mode supply current Analog + digital supply current. (See Table 1 on page 4) —300 — µA Digital Supply Current (shutdown) Oscillator not running, VDD mon- itor disabled —— TBD µA Digital Supply RAM Data Retention Voltage —1.5 — V |
Аналогичный номер детали - SI8252-IM |
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Аналогичное описание - SI8252-IM |
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