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FLM1314-3F датащи(PDF) 1 Page - Eudyna Devices Inc

номер детали FLM1314-3F
подробное описание детали  X, Ku-Band Internally Matched FET
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производитель  EUDYNA [Eudyna Devices Inc]
домашняя страница  http://www.sei-device.com/index.asp
Logo EUDYNA - Eudyna Devices Inc

FLM1314-3F датащи(HTML) 1 Page - Eudyna Devices Inc

  FLM1314-3F Datasheet HTML 1Page - Eudyna Devices Inc FLM1314-3F Datasheet HTML 2Page - Eudyna Devices Inc FLM1314-3F Datasheet HTML 3Page - Eudyna Devices Inc FLM1314-3F Datasheet HTML 4Page - Eudyna Devices Inc  
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Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
1400
2100
-
1300
-
-0.5
-1.5
-3.0
-5.0
-
-
5.0
5.5
-
-25
-
34.0
35.0
-
VDS = 5V, IDS = 70mA
VDS = 5V, IDS = 900mA
VDS = 5V, VGS = 0V
IGS = -70µA
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL= 50 ohm
f = 14.5GHz,
∆f = 10 MHz
2-Tone Test
Pout = 24.0dBm S.C.L.
mA
mS
V
dB
%
-42
-45
-
dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
900
1100
mA
Idsr
IM3
ηadd
Gain Flatness
--
±0.6
dB
∆G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
Channel to Case
Thermal Resistance
-
5.0
6.0
°C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IA
10V x Idsr x Rth
Channel Temperature Rise
-
-
66
°C
∆Tch
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25.0
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100
Ω.
1
Edition 1.4
August 2004
FLM1314-3F
X, Ku-Band Internally Matched FET
DESCRIPTION
The FLM1314-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• High Output Power: P1dB = 35.0dBm (Typ.)
• High Gain: G1dB = 5.5dB (Typ.)
• High PAE:
ηadd = 25% (Typ.)
• Low IM3 = -45dBc@Po = 24.0dBm
• Broad Band: 13.75 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50


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