поискавой системы для электроныых деталей |
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FLM1314-3F датащи(PDF) 1 Page - Eudyna Devices Inc |
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FLM1314-3F датащи(HTML) 1 Page - Eudyna Devices Inc |
1 / 4 page Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Power-added Efficiency 3rd Order Intermodulation Distortion Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS - 1400 2100 - 1300 - -0.5 -1.5 -3.0 -5.0 - - 5.0 5.5 - -25 - 34.0 35.0 - VDS = 5V, IDS = 70mA VDS = 5V, IDS = 900mA VDS = 5V, VGS = 0V IGS = -70µA VDS =10V, IDS = 0.6 IDSS (Typ.), f = 13.75 ~ 14.5 GHz, ZS=ZL= 50 ohm f = 14.5GHz, ∆f = 10 MHz 2-Tone Test Pout = 24.0dBm S.C.L. mA mS V dB % -42 -45 - dBc dBm V gm Vp VGSO P1dB G1dB Drain Current - 900 1100 mA Idsr IM3 ηadd Gain Flatness -- ±0.6 dB ∆G Test Conditions Unit Limit Typ. Max. Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 °C) Channel to Case Thermal Resistance - 5.0 6.0 °C/W Rth G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level CASE STYLE: IA 10V x Idsr x Rth Channel Temperature Rise - - 66 °C ∆Tch Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 15 -5 25.0 -65 to +175 175 Tc = 25°C V V W °C °C PT Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 °C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100 Ω. 1 Edition 1.4 August 2004 FLM1314-3F X, Ku-Band Internally Matched FET DESCRIPTION The FLM1314-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power: P1dB = 35.0dBm (Typ.) • High Gain: G1dB = 5.5dB (Typ.) • High PAE: ηadd = 25% (Typ.) • Low IM3 = -45dBc@Po = 24.0dBm • Broad Band: 13.75 ~ 14.5GHz • Impedance Matched Zin/Zout = 50 Ω |
Аналогичный номер детали - FLM1314-3F |
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Аналогичное описание - FLM1314-3F |
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