FMM5803X

27.5-31.5GHz Power Amplifier MMIC

Item

Symbol

Drain Voltage

VDD

10

V

Gate Voltage

VGG

-3.0

V

Input Power

Pin

25

dBm

Storage Temperature

-65 to +175

°C

Tstg

Condition

Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDD) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.

3. This product should be hermetically packaged

Operating Backside Temperature

-40 to +85

°C

Top

1

Edition 1.1

June 2000

Item

Symbol

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Input Return Loss

RLin

--

-12

dB

Output Return Loss

RLout

-

-8

-dB

Frequency Range

f

27.5 - 31.5

GHz

Output Power at 1 dB G.C.P.

28

30

-

dBm

Power Gain at 1 dB G.C.P.

19*

17**

dB

G.C.P.: Gain Compression Point

Power-Added Efficiency

-20-

%

ηadd

Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)

Drain Current

-

700

950

mA

10**

12**

12*

14*

VDD = 6V

f = 27.5 ~ 31.5 GHz

*: at f = 27.5-30.0 GHz

IDD = 650mA (Typ.)

ZS = ZL = 50Ω

**: at f = 30.0-31.5 GHz

DESCRIPTION

The FMM5803X is a high-gain, wide band 3-stage

MMIC amplifier designed for operation in the 27.5-31.5 GHz

frequency range. This amplifier has an input and output

designed for use in 50Ω systems.This device is well suited for

point-to-point, and point-to-multi-point(LMDS) communication

applications.

FEATURES

• High Output Power: P1dB = 30dBm (Typ.)

• High Gain: G1dB = 14dB (Typ.)

• High PAE: ηadd = 20% (Typ.)

• Wide Frequency Band: 27.5-31.5 GHz

• Impedance Matched Zin/Zout = 50Ω

•

0.25µm PHEMT Technology