SI8435DB datasheet(2/3 Pages) VAISH

номер детали	SI8435DB

подробное описание детали	Dual P-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si8435DB

www.vishay.com

Document Number: 74145

S-52479

Rev. A, 12-Dec-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

0.80

V

On-State Drain Current

a

ID(on)

VDS ≤ −5 V, VGS = −4.5 V

60

A

VGS = −4.5 V, ID = −3.3 A

0.063

0.060

VGS = −2.5 V, ID = −2.8 A

0.082

0.083

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −0.76 A

0.107

0.108

Ω

Forward Transconductance

a

gfs

VDS = −10 V, ID = −3.3 A

11

9

S

Diode Forward Voltage

a

VSD

IS = −1 A, VGS = 0 V

−0.78

−0.80

V

Dynamic

b

Total Gate Charge

Qg

5

5.5

Gate-Source Charge

Qgs

0.75

Gate-Drain Charge

Qgd

VDS = −10 V, VGS = −4.5 V, ID = −4.6 A

1.5

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

Аналогичный номер детали - SI8435DB

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Vishay Siliconix	SI8435DB	120Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. D, 08-Sep-08

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Аналогичное описание - SI8435DB

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