SENSITRON
SEMICONDUCTOR
• 221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD040SC200A/B
Technical Data
Data Sheet 760, Rev.-
Ultra Fast Trr < 7 nsec
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Soft Reverse Recovery at Low and High Temperature
•
Very Low Forward Voltage Drop
•
Low Reverse Leakage Current
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
•
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1):
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
1
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(1)
20
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 0.13A,
L = 40mH
2.8
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by T
J max VA=1.5VR
0.13
A
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics
(1):
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 1A, Pulse, TJ = 25 °C
0.92
V
VF2
@ 1A, Pulse, TJ = 125 °C
0.76
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C
30
µA
IR2
@VR = 200V, Pulse,
TJ = 125 °C
0.6
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
20
pF
Max. Reverse Recovery Time
trr
IF = 0.5 A, IR = 1.0 A,
IRM = 0.25 A, TJ = 25 °C
7
nsec
(1) in SHD package
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
