поискавой системы для электроныых деталей |
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1PS59SB20 датащи(PDF) 2 Page - NXP Semiconductors |
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1PS59SB20 датащи(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Jul 28 2 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES • Ultra fast switching speed • Low forward voltage • Guard ring protected • Small SMD package. APPLICATIONS • High-speed switching • Voltage clamping • Protection circuits. DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in an SC-59 small SMD plastic package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SC-59) and symbol. Marking code: 20. dbook, halfpage MSA314 Top view 2 1 3 3 12 n.c. MLC357 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 500 mA IFSM non-repetitive peak forward current − 2A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C |
Аналогичный номер детали - 1PS59SB20 |
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Аналогичное описание - 1PS59SB20 |
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