поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

KM681000CLR-5L датащи(PDF) 5 Page - Samsung semiconductor

номер детали KM681000CLR-5L
подробное описание детали  128K x8 bit Low Power CMOS Static RAM
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681000CLR-5L датащи(HTML) 5 Page - Samsung semiconductor

  KM681000CLR-5L Datasheet HTML 1Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 2Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 3Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 4Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 5Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 6Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 7Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 8Page - Samsung semiconductor KM681000CLR-5L Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 10 page
background image
PRELIMINARY
KM681000C Family
CMOS SRAM
Revision 2.0
November 1997
5
CL
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :CL=100pF+1TTL
AC CHARACTERISTICS
Parameter List
Symbol
Speed Bins
Units
55ns
70ns
Min
Max
Min
Max
Read
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO1, tCO2
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
25
ns
Output disable to high-Z output
tOHZ
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
ns
Write
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR1,tWR2
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
25
ns
Data to write time overlap
tDW
25
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
1. CS1
≥Vcc-0.2v, CS2≥Vcc-0.2V or CS2≤0.2V
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS11)
≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V
2.0
-
5.5
V
Data retention current
IDR
Vcc=3.0V, CS1
≥Vcc-0.2V,
CS2
≥Vcc-0.2V or CS2≤0.2V
KM681000CL
-
1
20
µA
KM681000CL-L
-
1
10
KM681000CLI
-
-
25
KM681000CLI-L
-
-
10
Data retention set-up
tSDR
See data retention waveform
0
-
-
ms
Recovery time
tRDR
5
-
-


Аналогичный номер детали - KM681000CLR-5L

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
KM681000 SAMSUNG-KM681000 Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
KM681000B SAMSUNG-KM681000B Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
KM681000BL SAMSUNG-KM681000BL Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
KM681000BL-L SAMSUNG-KM681000BL-L Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
KM681000BLE SAMSUNG-KM681000BLE Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
More results

Аналогичное описание - KM681000CLR-5L

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
KM681000B SAMSUNG-KM681000B Datasheet
192Kb / 11P
   128K x8 bit Low Power CMOS Static RAM
K6T1008C2C SAMSUNG-K6T1008C2C Datasheet
189Kb / 10P
   128K x8 bit Low Power CMOS Static RAM
K6T1008V2C-TB70 SAMSUNG-K6T1008V2C-TB70 Datasheet
149Kb / 11P
   128K x8 bit Low Power and Low Voltage CMOS Static RAM
logo
Emerging Memory & Logic...
EM610FV8T EMLSI-EM610FV8T Datasheet
188Kb / 11P
   128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM610FV8 EMLSI-EM610FV8 Datasheet
70Kb / 11P
   128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM610FV8S EMLSI-EM610FV8S Datasheet
67Kb / 11P
   128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM641FT8V EMLSI-EM641FT8V Datasheet
435Kb / 11P
   512K x8 bit Low Power Full CMOS Static RAM
EM641FT8 EMLSI-EM641FT8 Datasheet
387Kb / 10P
   512K x8 bit Low Power Full CMOS Static RAM
EM641FT8S EMLSI-EM641FT8S Datasheet
863Kb / 11P
   512K x8 bit Low Power Full CMOS Static RAM
EM641FT8T EMLSI-EM641FT8T Datasheet
475Kb / 11P
   512K x8 bit Low Power Full CMOS Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com