Rev: 1.02 9/2001

7/11

© 1999, Giga Semiconductor, Inc.

For latest documentation see http://www.gsitechnology.com.

GS78116B

* These parameters are sampled and are not 100% tested.

Write Cycle 1: WE Controlled

Write Cycle

Parameter

Symbol

-10

-12

-15

Unit

Min Max Min Max Min Max

Write cycle time

tWC

10

—

12

—

15

—

ns

Address valid to end of write

tAW

7

—

8

—

10

—

ns

Chip enable to end of write

tCW

7

—

8

—

10

—

ns

Data set up time

tDW

5

—

6

—

7

—

ns

Data hold time

tDH

0

—

0

—

0

—

ns

Write pulse width

tWP

7

—

8

—

10

—

ns

Address set up time

tAS

0

—

0

—

0

—

ns

Write recovery time (WE)

tWR

0

—

0

—

0

—

ns

Write recovery time (CE)

tWR1

0

—

0

—

0

—

ns

Output Low Z from end of write

3

—

3

—

3

—

ns

Write to output in High Z

—

4

—

5

—

6

ns

Address

CE

WE

Data In

OE

Data Out

Data valid

High impedance