поискавой системы для электроныых деталей |
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SPI10N10L датащи(PDF) 2 Page - Infineon Technologies AG |
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SPI10N10L датащи(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 200 5-02-14 Rev. 2.1 Page 2 SPI10N10L SPP10N10L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA - - - - 75 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 21 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=125°C IDSS - - 0.01 1 1 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=8.1A RDS(on) - 169 210 m Drain-source on-state resistance VGS=10V, ID=8.1A RDS(on) - 124 154 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. |
Аналогичный номер детали - SPI10N10L |
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Аналогичное описание - SPI10N10L |
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