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BFC19 датащи(PDF) 1 Page - Seme LAB |
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BFC19 датащи(HTML) 1 Page - Seme LAB |
1 / 2 page Characteristic Test Conditions Min. Typ. Max. Unit Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) VDSS ID IDM , ILM VGS PD TJ , TSTG TL 1 3 4 2 R 38.0 (1 .496) 38.2 (1 .504) 30.1 (1 .1 8 5 ) 3 0 .3 (1 .193 ) 14.9 (0 .5 87) 15.1 (0 .5 94) 3 .3 (0 .129 ) 3 .6 (0 .1 43) 7.8 (0 .3 0 7 ) 8.2 (0 .3 2 2 ) 3 1 .5 (1 .240 ) 3 1 .7 (1 .248 ) 4.0 (0 .1 5 7 ) (2 P la c e s) R = 4.0 (0 .1 57 ) 4.2 (0 .1 65 ) ) ) 4.1 (0 .1 61 4.3 (0 .1 69 4.8 (0 .1 87 ) 4.9 (0 .1 93 ) (4 places) W = H = 8.9 (0 .3 50) 9.6 (0 .3 78) 11 .8 (0 .463) 12 .2 (0 .480) Hex Nut M 4 (4 places) 0.75 (0 .0 30 ) 0.85 (0 .0 33 ) 5.1 (0 .2 01 ) 5.9 (0 .2 32 ) 1.95 (0 .0 77) 2.1 4 (0 .0 84 ) SOT–227 Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 and Inductive Current Clamped Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. VGS = 0V , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 5.0mA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 400 86 344 ±30 690 5.52 –40 to 150 300 V A A V W W / °C °C Drain – Source Breakdown Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage 400 86 0.042 250 1000 ±100 24 V A Ω µA nA V ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380 µS , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BFC19 LAB SEME VDSS 400V ID(cont) 86A RDS(on) 0.042Ω Ω * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 4TH GENERATION MOSFET Terminal 1 Source* Terminal 2 Drain Terminal 3 Gate Terminal 4 Source* |
Аналогичный номер детали - BFC19 |
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Аналогичное описание - BFC19 |
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