поискавой системы для электроныых деталей |
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WV3HG264M72EEU665D7IMG датащи(PDF) 8 Page - White Electronic Designs Corporation |
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WV3HG264M72EEU665D7IMG датащи(HTML) 8 Page - White Electronic Designs Corporation |
8 / 11 page WV3HG264M72EEU-D7 May 2006 Rev. 0 ADVANCED 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs AC TIMING PARAMETERS (continued) VCC = +1.8V ± 0.1V Parameter Symbol 806 665 534 403 Unit Min Max Min Max Min Max Min Max Address and control input pulse width for each input tIPW TBD TBD 0.6 0.6 0.6 tCK Address and control input setup time tIS TBD TBD 200 250 250 ps Address and control input hold time tIH TBD TBD 275 375 475 ps CAS# to CAS# command delay tCCD TBD TBD 222 ps ACTIVE to ACTIVE (same bank) command tRC TBD TBD 54 55 55 ns ACTIVE bank a to ACTIVE bank b command tRRD TBD TBD 7.5 7.5 7.5 ns ACTIVE to READ or WRITE delay tRCD TBD TBD 15 15 15 ns Four Bank Activate period tFAW TBD TBD 37.5 37.5 37.5 37.5 37.5 37.5 ns ACTIVE to PRECHARGE command tRAS TBD TBD 45 70,000 45 70,000 45 70,000 ns Internal READ to precharge command delay tRTP TBD TBD 7.5 7.5 7.5 ns Write recovery time tWR TBD TBD 15 15 15 ns Auto precharge write recovery + precharge time tDAL TBD TBD tWR + tRP tWR + tRP tWR + tRP ns Internal WRITE to READ command delay tWTR TBD TBD 7.5 7.5 10 ns PRECHARGE command period tRP TBD TBD 15 15 15 ns PRECHARGE ALL command period tRPA TBD TBD tRP + tCK tRP + tCK tRP + tCK ns LOAD MODE command cycle time tMRD TBD TBD 222 tCK CKE low to CK, CK# uncertainty tDELAY TBD TBD tIS+tCK+tIH tIS+tCK+tIH tIS+tCK+tIH ns REFRESH to Active or Refresh to Refresh command interval tRFC TBD TBD 105 70,000 105 70,000 105 70,000 ns Average periodic refresh interval tREFI TBD TBD 7.8 7.8 7.8 ns Exit self refresh to non-READ command tXSNR TBD TBD tRFC(MIN) + 10 tRFC(MIN) + 10 tRFC(MIN) + 10 ns Exit self refresh to READ tXSRD TBD TBD 200 200 200 tCK Exit self refresh timing reference tlSXR TBD TBD tIS tIS tIS ps ODT turn-on delay tAOND TBD TBD 222222 tCK ODT turn-on tACN TBD TBD tAC(MIN) tAC(MAX) + 1000 tAC(MIN) tAC(MAX) + 1000 tAC(MIN) tAC(MAX) + 1000 ps ODT turn-off delay tAOFD TBD TBD 2.5 2.5 2.5 2.5 2.5 2.5 tCK ODT turn-off tAOF TBD TBD tAC(MIN) tAC(MAX) + 600 tAC(MIN) tAC(MAX) + 600 tAC(MIN) tAC(MAX) + 600 ps ODT turn-on (power-down mode) tAONPD TBD TBD tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 ps ODT turn-off (power-down mode) tAOFPD TBD TBD tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 +1000 tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 +1000 tAC(MIN) + 2000 2 x tCK + tAC(MAX) + 1000 ps ODT to power-down entry latency tANPD TBD TBD 333 tCK ODT power-down exit latency tAXPD TBD TBD 888 tCK Exit active power-down to READ command, MR[bit12=0] tXARD TBD TBD 222 tCK Exit active power-down to READ command, MR[bit12=1] tXARDS TBD TBD 7-AL 6-AL 6-AL tCK Exit precharge power-down to any non-READ command tXP TBD TBD 222 tCK CKE minimum high/low time tCKE TBD TBD 333 tCK AC specification is based on SAMSUNG components. Other DRAM manufacturers specification may be different. |
Аналогичный номер детали - WV3HG264M72EEU665D7IMG |
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Аналогичное описание - WV3HG264M72EEU665D7IMG |
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