STW54NK30Z datasheet(3/10 Pages) STMICROELECTRONICS

номер детали	STW54NK30Z

подробное описание детали	N-CHANNEL 300V - 0.052??- 54A TO-247 Zener-Protected SuperMESH??MOSFET

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STW54NK30Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 7: On/Off

Table 8: Dynamic

Table 9: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

300

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 150 µA

33.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 27 A

0.052

0.060

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 15 V, ID = 27 A

25

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

4960

745

186

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 240 V

550

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 150 V, ID = 27 A

RG =4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

40

45

116

35

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 240V, ID = 54A,

VGS = 10V

158

30

90

221

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

54

200

A

VSD (1)

Forward On Voltage

ISD = 54 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 54 A, di/dt = 100A/µs

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

328

2.8

17.2

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 54 A, di/dt = 100A/µs

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

416

4.2

20.2

ns

µC

A

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