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2SJ680 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SJ680 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ680 2004-12-24 1 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −200 V Drain-gate voltage (RGS = 20 kΩ) VDGR −200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −2.5 Drain current Pulse (Note 1) IDP −10 A Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current IAR −2.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) 0.6±0.15 0.8 MAX. 123 1.1 MAX. 0.6±0.15 0.6 MAX 0.6 MAX. 1.1±0.2 6.5±0.2 2.3 2.3 5.2±0.2 0.9 |
Аналогичный номер детали - 2SJ680 |
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Аналогичное описание - 2SJ680 |
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