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STD60N55-1 датащи(PDF) 1 Page - STMicroelectronics |
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STD60N55-1 датащи(HTML) 1 Page - STMicroelectronics |
1 / 12 page PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. July 2006 Rev 1 1/12 12 STD60N55-1 STD60N55 N-channel 55V - 8.0m Ω - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET General features ■ Standard threshold drive ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID Pw STD60N55 55V <10.5m Ω 65A 110W STD60N55-1 55V <10.5m Ω 65A 110W DPAK 1 3 3 2 1 IPAK www.st.com Order codes Part number Marking Package Packaging STD60N55 D60N55 DPAK Tape & reel STD60N55-1 D60N55-1 IPAK Tube |
Аналогичный номер детали - STD60N55-1 |
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Аналогичное описание - STD60N55-1 |
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