NTTS2P03R2 datasheet(1/6 Pages) ONSEMI

номер детали	NTTS2P03R2

подробное описание детали	Power MOSFET -2.48 Amps, -30 Volts P?묬hannel Enhancement Mode Single Micro8 Package

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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December, 2003 − Rev. 1

1

Publication Order Number:

NTTS2P03R2/D

NTTS2P03R2

Power MOSFET

−2.48 Amps, −30 Volts

P−Channel Enhancement Mode

Single Micro8

t Package

Features

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Miniature Micro8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Micro8 Mounting Information Provided

Applications

• Power Management in Portable and Battery−Powered Products, i.e.:

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−30

V

Gate−to−Source Voltage − Continuous

VGS

"20

V

Thermal Resistance −

Junction−to−Ambient (Note 1.)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

RθJA

PD

ID

160

0.78

−2.48

−1.98

°C/W

W

A

Thermal Resistance −

Junction−to−Ambient (Note 2.)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

RθJA

PD

ID

70

1.78

−3.75

−3.0

°C/W

W

A

Thermal Resistance −

Junction−to−Ambient (Note 3.)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

Pulsed Drain Current (Note 5.)

RθJA

PD

ID

IDM

210

0.60

−2.10

−1.67

−17

°C/W

W

A

Thermal Resistance −

Junction−to−Ambient (Note 4.)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

Pulsed Drain Current (Note 5.)

RθJA

PD

ID

IDM

100

1.25

−3.02

−2.42

−24

°C/W

W

A

Operating and Storage

Temperature Range

TJ, Tstg

− 55 to

+150

°C

1. Minimum FR−4 or G−10 PCB, Time

≤ 10 Seconds.

2. Mounted onto a 2

″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single

sided), Time

≤ 10 Seconds.

3. Minimum FR−4 or G−10 PCB, Steady State.

4. Mounted onto a 2

″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single

sided), Steady State.

5. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2%.

Drain

(Top View)

8

Source

7

6

5

1

2

3

4

Device

Package

Shipping†

ORDERING INFORMATION

NTTS2P03R2

Micro8

4000/Tape & Reel

Micro8

CASE 846A

STYLE 1

Single P−Channel

D

S

G

Source

Gate

Drain

MARKING DIAGRAM

& PIN ASSIGNMENT

1

8

YWW

AE

Y

= Year

WW = Work Week

AE = Device Code

−2.48 AMPERES

−30 VOLTS

85 m

W @ VGS = −10 V

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Аналогичный номер детали - NTTS2P03R2

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NTTS2P03R2	80Kb / 6P	Power MOSFET ??.48 Amps, ??0 Volts June, 2005 ??Rev. 2
	NTTS2P03R2G	80Kb / 6P	Power MOSFET ??.48 Amps, ??0 Volts June, 2005 ??Rev. 2
	NTTS2P03R2	75Kb / 6P	Power MOSFET -2.48 Amps, -30 Volts June, 2005 ??Rev. 2

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Аналогичное описание - NTTS2P03R2

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NTTS2P03R2	75Kb / 6P	Power MOSFET -2.48 Amps, -30 Volts June, 2005 ??Rev. 2
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Аналогичный номер детали - NTTS2P03R2

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