BA682 datasheet(2/5 Pages) PHILIPS

номер детали	BA682

подробное описание детали	Band-switching diodes

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производитель	PHILIPS [NXP Semiconductors]

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1996 Mar 13

2

Philips Semiconductors

Product speciﬁcation

Band-switching diodes

BA682; BA683

FEATURES

• Continuous reverse voltage:

max. 35 V

• Continuous forward current:

max. 100 mA

• Low diode capacitance:

max. 1.5 pF

• Low diode forward resistance:

max. 0.7 to 1.2

Ω.

APPLICATION

• Band-switching in VHF television

tuners.

DESCRIPTION

Planar high performance band-switching diodes in a glass SOD80

SMD package.

Fig.1 Simplified outline (SOD80) and symbol.

handbook, 4 columns

MAM061

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VR

continuous reverse voltage

−

35

V

IF

continuous forward current

−

100

mA

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VF

forward voltage

IF = 100 mA; see Fig.2

1.0

V

IR

reverse current

see Fig.3

VR = 20V

50

nA

VR = 20 V; Tj =75 °C1

µA

Cd

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.4

1.5

pF

Cd

diode capacitance

f = 1 MHz; VR = 3 V; see Fig.4

BA682

1.25

pF

BA683

1.20

pF

rD

diode forward resistance

IF = 3 mA; f = 200 MHz; see Fig.5

BA682

0.7

Ω

BA683

1.2

Ω

rD

diode forward resistance

IF = 10 mA; f = 200 MHz; see Fig.5

BA682

0.5

Ω

BA683

0.9

Ω

Аналогичный номер детали - BA682

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	BA682	46Kb / 3P	Silicon Planar Diodes Rev. 1.5, 16-Mar-06
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Аналогичное описание - BA682

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	BA682-GS08	82Kb / 5P	Band Switching Diodes Rev. 1.5, 16-Mar-06
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