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BD242A датащи(PDF) 2 Page - Bourns Electronic Solutions

номер детали BD242A
подробное описание детали  PNP SILICON POWER TRANSISTORS
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производитель  BOURNS [Bourns Electronic Solutions]
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BD242A датащи(HTML) 2 Page - Bourns Electronic Solutions

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BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
BD242
BD242A
BD242B
BD242C
-45
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -55 V
VCE = -70 V
VCE = -90 V
VCE = -115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD242
BD242A
BD242B
BD242C
-0.2
-0.2
-0.2
-0.2
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB =0
IB =0
BD242/242A
BD242B/242C
-0.3
-0.3
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC =0
-1
mA
hFE
Forward current
transfer ratio
VCE =
-4 V
VCE =
-4 V
IC = -1 A
IC = -3 A
(see Notes 5 and 6)
25
10
VCE(sat)
Collector-emitter
saturation voltage
IB =
-0.6 A
IC = -3 A
(see Notes 5 and 6)
-1.2
V
VBE
Base-emitter
voltage
VCE =
-4 V
IC =
-3 A
(see Notes 5 and 6)
-1.8
V
hfe
Small signal forward
current transfer ratio
VCE = -10 V
IC =-0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = -10 V
IC =-0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
3.125
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -1 A
VBE(off) = 3.7 V
IB(on) = -0.1 A
RL = 20 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
0.2
µs
toff
Turn-off time
0.3
µs


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