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BD249B датащи(PDF) 2 Page - Bourns Electronic Solutions

номер детали BD249B
подробное описание детали  NPN SILICON POWER TRANSISTORS
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производитель  BOURNS [Bourns Electronic Solutions]
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BD249B датащи(HTML) 2 Page - Bourns Electronic Solutions

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BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
BD249
BD249A
BD249B
BD249C
45
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE =115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD249
BD249A
BD249B
BD249C
0.7
0.7
0.7
0.7
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB =0
IB =0
BD249/249A
BD249B/249C
1
1
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
VCE =
4 V
IC =1.5 A
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
25
10
5
VCE(sat)
Collector-emitter
saturation voltage
IB =
1.5 A
IB =
5 A
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
1.8
4
V
VBE
Base-emitter
voltage
VCE =
4 V
VCE =
4 V
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
2
4
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC =
1 A
f = 1 kHz
25
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC =
1 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1°C/W
RθJA
Junction to free air thermal resistance
42
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 5 A
VBE(off) = -5 V
IB(on) = 0.5 A
RL = 5 Ω
IB(off) = -0.5 A
tp = 20 µs, dc ≤ 2%
0.3
µs
toff
Turn-off time
0.9
µs


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