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BC140-10 датащи(PDF) 4 Page - NXP Semiconductors

номер детали BC140-10
подробное описание детали  NPN medium power transistors
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC140-10 датащи(HTML) 4 Page - NXP Semiconductors

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1997 May 12
4
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
100
nA
IE = 0; VCB =60V; Tj = 150 °C
10
100
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 100 µA; VCE =1V
BC140-10; BC141-10
40
BC140-16; BC141-16
90
hFE
DC current gain
IC = 100 mA; VCE =1V
BC140-10; BC141-10
63
100
160
BC140-16; BC141-16
100
160
250
hFE
DC current gain
IC = 1 A; VCE =1V
BC140-10; BC141-10
20
BC140-16; BC141-16
30
VCEsat
collector-emitter saturation voltage
IC = 1 A; IB = 100 mA
0.6
1
V
VBE
base-emitter voltage
IC = 1 A; VCE =1V
1.2
1.8
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
−−
25
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
−−
80
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz 50
−−
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5mA
−−
250
ns
toff
turn-off time
−−
850
ns


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