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BC639 датащи(PDF) 3 Page - NXP Semiconductors |
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BC639 датащи(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 23 3 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 100 nA IE = 0; VCB =30V; Tj = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain VCE = 2 V; see Fig.2 IC = 5 mA 40 − IC = 150 mA 63 250 IC = 500 mA 25 − DC current gain IC = 150 mA; VCE = 2 V; see Fig.2 BC639-10 63 160 BC635-16; BC637-16; BC639-16 100 250 VCEsat collector-emitter saturation voltage IC = 500 mA; IB =50mA − 500 mV VBE base-emitter voltage IC = 500 mA; VCE =2V − 1V fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz 100 − MHz DC current gain ratio of the complementary pairs I C = 150 mA; VCE =2V − 1.6 h FE1 h FE2 ----------- |
Аналогичный номер детали - BC639 |
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Аналогичное описание - BC639 |
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