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BC639 датащи(PDF) 3 Page - NXP Semiconductors

номер детали BC639
подробное описание детали  NPN medium power transistors
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC639 датащи(HTML) 3 Page - NXP Semiconductors

  BC639 Datasheet HTML 1Page - NXP Semiconductors BC639 Datasheet HTML 2Page - NXP Semiconductors BC639 Datasheet HTML 3Page - NXP Semiconductors BC639 Datasheet HTML 4Page - NXP Semiconductors BC639 Datasheet HTML 5Page - NXP Semiconductors BC639 Datasheet HTML 6Page - NXP Semiconductors BC639 Datasheet HTML 7Page - NXP Semiconductors BC639 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC635; BC637; BC639
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
100
nA
IE = 0; VCB =30V; Tj = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
VCE = 2 V; see Fig.2
IC = 5 mA
40
IC = 150 mA
63
250
IC = 500 mA
25
DC current gain
IC = 150 mA; VCE = 2 V; see Fig.2
BC639-10
63
160
BC635-16; BC637-16; BC639-16
100
250
VCEsat
collector-emitter saturation voltage
IC = 500 mA; IB =50mA
500
mV
VBE
base-emitter voltage
IC = 500 mA; VCE =2V
1V
fT
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz
100
MHz
DC current gain ratio of the
complementary pairs
I
C = 150 mA; VCE =2V
1.6
h
FE1
h
FE2
-----------


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