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BC847AW датащи(PDF) 3 Page - NXP Semiconductors

номер детали BC847AW
подробное описание детали  NPN general purpose transistors
Download  8 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC847AW датащи(HTML) 3 Page - NXP Semiconductors

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1999 Apr 23
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
−−
15
nA
IE = 0; VCB =30V; Tj = 150 °C
−−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 2 mA; VCE =5V;
see Figs 2, 3 and 4
BC846W
110
450
BC847W
110
800
BC846AW; BC847AW
110
220
BC846BW; BC847BW
200
450
BC847CW
420
800
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−−
250
mV
IC = 100 mA; IB = 5 mA; note 1
−−
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
700
mV
IC = 100 mA; IB =5mA
900
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
700
mV
IC = 10 mA; VCE =5V
−−
770
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
−−
3pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
10
dB


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