1999 Apr 12

2

Philips Semiconductors

Product specification

NPN general purpose transistors

BC849W; BC850W

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Low noise stages in tape recorders, hi-fi amplifiers and

other audio-frequency equipment.

DESCRIPTION

NPN transistor in a SOT323 plastic package.

PNP complements: BC859W and BC860W.

MARKING

Note

1.

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

TYPE

NUMBER

MARKING

BC849BW

2B

∗

BC850BW

2F

∗

BC849CW

2C

∗

BC850CW

2G

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1

Simplified outline (SOT323) and symbol.

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC849W

−

30

V

BC850W

−

50

V

collector-emitter voltage

open base

BC849W

−

30

V

BC850W

−

45

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C