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BC849BW датащи(PDF) 3 Page - NXP Semiconductors

номер детали BC849BW
подробное описание детали  NPN general purpose transistors
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC849BW датащи(HTML) 3 Page - NXP Semiconductors

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1999 Apr 12
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
−−
15
nA
IE = 0; VCB =30V; Tj = 150 °C
−−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V; see Figs 2 and 3
BC849BW; BC850BW
200
450
BC849CW; BC850CW
420
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−−
250
mV
IC = 100 mA; IB = 5 mA; note 1
−−
600
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
700
mV
IC = 10 mA; VCE =5V
−−
770
mV
Cc
collector capacitance
IE =ie = 0; VCB =10V; f=1MHz
−−
3pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−−
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 10 Hz to 15.7 kHz
−−
4dB
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
4dB


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