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TL7660IDGKT датащи(PDF) 8 Page - Texas Instruments

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номер детали TL7660IDGKT
подробное описание детали  CMOS VOLTAGE CONVERTER
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TL7660IDGKT датащи(HTML) 8 Page - Texas Instruments

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Theoretical Power Efficiency Considerations
Do's and Don'ts
TL7660
CMOS VOLTAGE CONVERTER
SCAS794 – JUNE 2006
APPLICATION INFORMATION (continued)
In theory, a voltage converter can approach 100% efficiency if certain conditions are met.
The driver circuitry consumes minimal power.
The output switches have extremely low ON resistance and virtually no offset.
The impedances of the pump and reservoir capacitors are negligible at the pump frequency.
The TL7660 approaches these conditions for negative voltage conversion if large values of C1 and C2 are used.
Energy is only lost in the transfer of charge between capacitors if a change in voltage occurs. The energy lost is
defined by:
E = ½ C1(V1
2 – V
2
2)
Where V1 and V2 are the voltages on C1 during the pump and transfer cycles. If the impedances of C1 and C2
are relatively high at the pump frequency (see Figure 2) compared to the value of RL, there is a substantial
difference in the voltages V1 and V2. Therefore, it is not only desirable to make C2 as large as possible to
eliminate output voltage ripple but also to employ a correspondingly large value for C1 in order to achieve
maximum efficiency of operation.
Do not exceed maximum supply voltages.
Do not connect LV terminal to GND for supply voltages greater than 3.5 V.
Do not short circuit the output to VCC supply for supply voltages above 5.5 V for extended periods, however,
transient conditions including start-up are okay.
When using polarized capacitors, the positive terminal of C1 must be connected to terminal 2 of the TL7660,
and the positive terminal of C2 must be connected to GND.
If the voltage supply driving the TL7660 has a large source impedance (25
Ω – 30 Ω), then a 2.2-µF
capacitor from terminal 8 to ground may be required to limit rate of rise of input voltage to less than 2V/
µs.
Ensure that the output (terminal 5) does not go more positive than GND (terminal 3). Device latch up occurs
under these conditions. A 1N914 or similar diode placed in parallel with C2 prevents the device from latching
up under these conditions (anode to terminal 5, cathode to terminal 3).
8
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