BF998R datasheet(7/12 Pages) PHILIPS

номер детали	BF998R

подробное описание детали	Silicon N-channel dual-gate MOS-FETs

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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7 / 12 page

1996 Aug 01

7

Philips Semiconductors

Product speciﬁcation

Silicon N-channel dual-gate MOS-FETs

BF998; BF998R

Fig.13 Input admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC466

102

10

10 2

1

10

10 1

y is

(mS)

f (MHz)

b is

g is

Fig.14 Reverse transfer admittance and phase as a

function of frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC467

102

10

10 3

10 2

10

1

y rs

10 3

10

1

2

(

µS)

f (MHz)

rs

yrs

(deg)

rs

ϕ

Fig.15 Forward transfer admittance and phase as a

function of frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC468

102

10

1

10 2

10

1

10

2

y fs

(mS)

y fs

f (MHz)

(deg)

fs

ϕ

Fig.16 Output admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC469

102

10

10 1

10

1

10 2

yos

(mS)

f (MHz)

bos

gos

Аналогичный номер детали - BF998R

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	BF998R	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
Siemens Semiconductor G...	BF998R	33Kb / 2P	Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Infineon Technologies A...	BF998R	249Kb / 6P	Silicon N-Channel MOSFET Tetrode Feb-13-2004
Vishay Siliconix	BF998R	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08
Infineon Technologies A...	BF998R	93Kb / 9P	Silicon N_Channel MOSFET Tetrode 2007-04-20

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Аналогичное описание - BF998R

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BF901	46Kb / 7P	Silicon n-channel dual gate MOS-FETs November 1992
Quanzhou Jinmei Electro...	BF998_2015	85Kb / 12P	Silicon N-channel dual-gate MOS-FETs
	BF1105_2015	125Kb / 16P	N-channel dual-gate MOS-FETs
	BF1109_2015	120Kb / 16P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	303Kb / 14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007
Quanzhou Jinmei Electro...	BF1212_2015	136Kb / 15P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF1101R-215	399Kb / 15P	N-channel dual-gate MOS-FETs 1999 May 14
Quanzhou Jinmei Electro...	BF1109	120Kb / 16P	N-channel dual-gate MOS-FETs
Quanzhou Jinmei Electro...	BF1211	119Kb / 15P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	111Kb / 16P	N-channel dual gate MOS-FETs 1999 May 17

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Аналогичный номер детали - BF998R

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