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BAP70AM датащи(PDF) 2 Page - NXP Semiconductors |
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BAP70AM датащи(HTML) 2 Page - NXP Semiconductors |
2 / 8 page BAP70AM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 7 September 2010 2 of 8 NXP Semiconductors BAP70AM Silicon PIN diode array 4. Marking 5. Limiting values 6. Thermal characteristics Table 3. Marking Type number Marking code Description BAP70AM N9* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 100 mA Ptot total power dissipation Tsp =90 °C- 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 260 K/W |
Аналогичный номер детали - BAP70AM |
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Аналогичное описание - BAP70AM |
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