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IRF6641TR1PBF датащи(PDF) 1 Page - International Rectifier

номер детали IRF6641TR1PBF
подробное описание детали  DirectFET TM MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF6641TR1PBF датащи(HTML) 1 Page - International Rectifier

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1
10/02/06
DirectFET
™ Power MOSFET ‚
DirectFET
™ ISOMETRIC
MZ
PD - 97262
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Description
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 11A.
Notes:
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6641TRPbF
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

4
6
8
10
12
14
16
V GS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
I D = 5.5A
T J = 25°C
T J = 125°C
0
5
10
15
20
25
30
35
40
Q G , Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V DS = 160V
V DS = 100V
V DS = 40V
I D = 5.5A
SH
SJ
SP
MZ
MN
VDSS
VGS
RDS(on)
200V max ±20V max
51m
Ω@ 10V
Qg tot
Qgd
Vgs(th)
34nC
9.5nC
4.0V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
46
Max.
3.7
26
37
±20
200
4.6
11


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